SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode

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SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode

Name: SI2301 MOSFETs FETs SOT23 MOS High Power Transistor 25A 20V A1SHB P Channel Enhancement Mode
Brand: CANYI
Price: 1 USD

Wholesale SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode from china suppliers

Brand Name : CANYI

Model Number : SI2301

Certification : RoHS

Place of Origin : Guangdong, China

MOQ : 1000PCS

Price : Negotiated

Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)

Supply Ability : 15,000,000PCS Per Day

Delivery Time : 3-5 days

Packaging Details : Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms

Type : Silicon Transistor

Package Type : Surface Mount

Package : SOT-23

VDS : -20V

TJ, Tstg : -55 to 150℃

Sample : Free

Port : Shenzhen

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SI2301 MOSFETs FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode

Features:

Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance

Maximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted)

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	-20	V
Gate-Source Voltage		V_GS	±8
Continuous Drain Current		I_D	-2.2	A
Pulsed Drain Current ¹⁾		I_DM	-8
Maximum Power Dissipation ²⁾	TA=25℃	P_D	1.25	W
	TA=75℃		0.8
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150	℃
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾		R_thJA	100
Junction-to-Ambient Thermal Resistance (PCB mounted) ³⁾			166	℃/W

Notes
1)Pulse width limited by maximum junction temperature.

2)Surface Mounted on FR4 Board, t ≤5 sec.

3)Surface Mounted on FR4 Board.

ELECTRICAL CHARACTERISTICS

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Static
Drain-Source Breakdown Voltage	BV_DSS	V_GS = 0V, I_D = -250uA	-20			V
Drain-Source On-State Resistance¹⁾	R_DS(on)	V_GS = -4.5V, I_D = -2.8A		105	130	mΩ
Drain-Source On-State Resistance¹⁾	R_DS(on)	V_GS = -2.5V, I_D = -2.0A		145	190	mΩ
Gate Threshold Voltage	V_GS(th)	V_D_S = V_GS I_D = -250uA	-0.45			v
Zero Gate Voltage Drain Current	I_DSS	V_D_S = -20V, V_GS = -0V			-1	uA
Zero Gate Voltage Drain Current	I_DSS	V_D_S = -20V, V_GS = -0V TJ=55℃			-10	uA
Gate Body Leakage	I_GSS	V_GS₌±8v,V_D_S= 0V			±100	nA
Forward Transconductance ¹⁾	g_fs	V_D_S= -5V,I_D= -2.8A		6.5	-	S
Dynamic
Total Gate Charge	Q_g	V_DS = -6V, I_D ≌ -2.8A V_GS = -4.5V		5.8	10	nC
Gate-Source Charge	Q_gs			0.85
Gate-Drain Charge	Q_gd			1.7
Turn-On Delay Time	t_d(on)	V_DD = -6V, RL=6Ω I_D≌-1.A, V_GEN = -4.5V RG = 6Ω		13	25	ns
Turn-On Rise Time	t_r			36	60
Turn-Off Delay Time	t_d(off)			42	70
Turn-Off Fall Time	t_f			34	60
Input Capacitance	C_iss	V_DS = -6V, V_GS = 0V f = 1.0 MHz		415		pF
Output Capacitance	C_oss			223
Reverse Transfer Capacitance	C_rss			87
Source-Drain Diode
Max. Diode Forward Current	I_S	I_S = -1.6A, V_GS= 0V			-1.6	A
Diode Forward Voltage	V_SD	I_S = -1.6A, V_GS= 0V		-0.8	-1.2	V

1)Pulse test: pulse width ≤300us, duty cycle≤2%

Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.
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Product Tags:

mosfet power transistor

high power transistor

SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode Images

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